Hall Effect Measurement Instrument

It can be used for room-temperature measurements of the Hall coefficient, resistivity, electron mobility, and carrier concentration in common semiconductor materials, making it an essential tool for studying the electronic properties of semiconductors and electronic materials.

Technical Specifications Product Features Download Materials

Project	Technical Specifications
Standard sample	Semiconductor thin films (P‑type and N‑type) such as Si, SiC, ZnO, CaN, ITO, etc.
Magnetic field strength	0.6T
Temperature range	RT
Magnetic field stability	±1% per year
Output current	100 nA to 500 mA
Mobility	2-10 cm²/V·s
Resistivity	10-5-10 Ωcm
Carrier concentration	108-102/cm3
Sample measurement dimensions	10×10 mm to 20×20 mm, thickness 10 nm to 2 mm
Test Standard	AsTm F76-1985

1. High-precision current source with output accuracy up to 0.1 µA, capable of measuring most semiconductor materials.

2. High-precision voltage source, with 24-bit ADC acquisition, achieving accuracy down to the microvolt level.

3. Reliable repeatability: Multi‑stage filtering in both hardware and software ensures more stable measurement data, guaranteeing that each experimental result is the average of multiple measurements.

4. Featuring a simple and elegant design, the instrument is easy to connect and operate. After configuring the sample information, users can initiate testing with a single click, simultaneously obtaining data on resistivity, carrier concentration, Hall coefficient, and sheet resistance.

5. Fast testing speed, supporting rapid switching of current and magnetic field directions, with data processing performed using the Van der Pauw method.